Crees CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET
offers excellent power added efficiency in comparison to other technologies. GaN
has superior properties compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity and higher thermal
conductivity. GaN HEMTs also offer greater power density and wider bandwidths
compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged
package for optimal electrical and thermal performance.
| Parameter |
8.4 GHz |
8.8GHz |
9.0GHz |
9.2GHz |
9.4GHz |
9.6GHz |
units |
| linear power |
12.7 |
12.4 |
12.7 |
13.1 |
13.1 |
12.4 |
dB |
| output power |
151 |
147 |
150 |
152 |
140 |
131 |
W |
| power gain |
10.8 |
10.6 |
10.7 |
10.7 |
10.5 |
10.2 |
dB |
| power added efficiency |
44 |
42 |
44 |
43 |
45 |
45 |
% |
| Features |
Application |
| 8.4-9.6 GHz Operation |
Marine Radar |
| 145WPOUT typical |
Weather Monitoring |
| 10dB Power Gain |
Air Traffic Control |
| 45% Typical PAE |
Maritime Vessel Traffic Control |
| 50 Ohm Internally Matched |
Port Security |
| < 0.3 dB Power Droop |
|
