Aluminium Nitride (AlN Substrate)
1)High thermal conductivity of more than 180W/m. K
2)High resistivity,
3)Low dielectric loss
4)Good insulation
5)Some other excellent properties
Material: Aluminium Nitride
Aluminum Nitride substrate material with its excellent ability to dissipate heat up to 200 W/mK, is the answer to the present trend toward miniaturization of high power microelectronic circuits and other high thermal hazard-free applications.
Valley has in stock AlN substrates and AlN wafers with thermal conductivity of 175 W/mK and 200 W/mK to meet
a variety of specification requirements.
The Aluminium Nitride substrate which has high thermal conductivity of 170 W/mK - 200 W/mK, high resistivity, low dielectric loss, good insulation and some other excellent properties. The ALN substrate is the best choice for a wide range of industrial insulating heat sink material of high power machinery and equipments such as high-frequency equipment substrate, high power transistor module substrate, high-density hybrid circuits, microwave power devices, power semiconductor devices, power electronic devices, optoelectronic components, laser-semi-conductor, LED, IC products, and so on.
