3-8 inch silicon ingot |
size | 3"/4"/5"/6"/8'' |
Type | N-type/P-type |
Dopant | P-type:Boron. N-type:Phos./As./Sb |
Orientation | 100/111 |
Diameter | 76.2±0.3mm /100±0.4mm / 125±0.5mm / 150±0.5mm / 200±0.5mm |
Growth Method | CZ/FZ |
Resistivity | ≥0.001Ω·cm / ≥100Ω·cm |
Oxygen Content | ≤18 New PPMA |
Carborn Content | ≤1New PPMA |
Purity | 11N(99.999999999%) |
Surface | No Lineage, Slip, Twinning, Cracks, or Dislocations |
Grade | 9N (99.9999999%) |
Package | Packed in wooden crate, inside polyethylene foam |
Length limits | According to your requirement. |
Price | According to your specification, especially resistivity and length. |